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Pekker D, Shah N, Sahu M, Bezryadin A, Goldbart PM. Stochastic dynamics of phase-slip trains and superconductive-resistive switching in current-biased nanowires. Phys. Rev. B. 2009;80:214525 (1 to 17).
Abstract: Superconducting nanowires fabricated via carbon-nanotube templating can be used to realize and study quasi-one-dimensional superconductors. However, measurement of the linear resistance of these nanowires have been inconclusive in determining the low-temperature behavior of phase-slip fluctuations, both quantal and thermal. Thus, we are motivated to study the nonlinear current-voltage characteristics in current-biased nanowires and the stochastic dynamics of superconductive-resistive switching, as a way of probing phase-slip events. In particular, we address the question: can a single phase-slip event occurring somewhere along the wire—during which the order-parameter fluctuates to zero—induce switching, via the local heating it causes? We explore this and related issues by constructing a stochastic model for the time evolution of the temperature in a nanowire whose ends are maintained at a fixed temperature. We derive the corresponding master equation as a tool for evaluating and analyzing the mean switching time at a given value of current (smaller than the depairing critical current). The model indicates that although, in general, several phase-slip events are necessary to induce switching via a thermal runaway, there is indeed a regime of temperatures and currents in which a single event is sufficient. We carry out a detailed comparison of the results of the model with experimental measurements of the distribution of switching currents, and provide an explanation for the rather counterintuitive broadening of the distribution width that is observed upon lowering the temperature. Moreover, we identify a regime in which the experiments are probing individual phase-slip events, and thus offer a way of unearthing and exploring the physics of nanoscale quantum tunneling of the one-dimensional collective quantum field associated with the superconducting order parameter.
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Tinkham M, Free JU, Lau CN, Markovic N. Hysteretic I–V curves of superconducting nanowires. Phys. Rev. B. 2003;68:134515(1 to 7).
Abstract: Experimental I–V curves of superconducting MoGe nanowires show hysteresis for the thicker wires and none for the thinner wires. A rather quantitative account of these data for representative wires is obtained by numerically solving the one-dimensional heat flow equation to find a self-consistent distribution of temperature and local resistivity along the wire, using the measured linear resistance R(T) as input. This suggests that the retrapping current in the hysteretic I–V curves is primarily determined by heating effects, and not by the dynamics of phase motion in a tilted washboard potential as often assumed. Heating effects and thermal fluctuations from the low-resistance state to a high-resistance, quasinormal regime appear to set independent upper bounds for the switching current.
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Romijn J, Klapwijk TM, Renne MJ, Mooij JE. Critical pair-breaking current in superconducting aluminum strips far below Tc. Phys Rev B. 1982;26(7):3648–55.
Abstract: Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity.
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Sahu M, Bae M-H, Rogachev A, Pekker D, Wei T-C, Shah N, et al. Individual topological tunnelling events of a quantum field probed through their macroscopic consequences. Nature Phys. 2009;5:503–8.
Abstract: Phase slips are topological fluctuations that carry the superconducting order-parameter field between distinct current-carrying states. Owing to these phase slips, superconducting nanowires acquire electrical resistance. In such wires, it is well known that at higher temperatures phase slips occur through the process of thermal barrier-crossing by the order-parameter field. At low temperatures, the general expectation is that phase slips should proceed through quantum tunnelling events, which are known as quantum phase slips. However, resistive measurements have produced evidence both for and against the occurrence of quantum phase slips. Here, we report evidence for the observation of individual quantum phase-slip events in homogeneous ultranarrow wires at high bias currents. We accomplish this through measurements of the distribution of switching currents for which the width exhibits a rather counter-intuitive, monotonic increase with decreasing temperature. Importantly, measurements show that in nanowires with larger critical currents, quantum fluctuations dominate thermal fluctuations up to higher temperatures.
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Zhizhon Y, Majedi HA. Optoelectronic mixing in the NbN superconducting nanowire single photon detectors. In: Proc. SPIE. Vol 3786.; 2009. 9.
Abstract: In this paper, we present our experimental results on the electrically pumped optoelectronic mixing effect exhibited in a niobium nitride (NbN) superconducting nanowire. The experimental setup in order to test the mixer has been reported in detail. This superconductive nanowire optoelectronic mixer demonstrates photodetection and mixing in an integrated manner. We have explored both effects under a great variety of external conditions, such as temperature and bias current, in order to seek potential ways toward quantum optoelectronic detection and mixing by such nanowire device.
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