| Records |
| Author |
Currie, N. C.; Demma, F. J.; Ferris Jr., D. D.; Kwasowsky, B. R.; McMillan, R. W.; Wicks, M. C. |
| Title |
Infrared and millimeter-wave sensors for military special operations and law enforcement applications |
Type |
Journal Article |
| Year |
1996 |
Publication |
Int. J. Infrared and Millimeter Waves |
Abbreviated Journal |
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| Volume |
17 |
Issue |
7 |
Pages |
1117-1138 |
| Keywords |
HgCdTe |
| Abstract |
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Edition |
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| ISSN |
0195-9271 |
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no |
| Call Number |
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Serial |
466 |
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| Author |
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
Type |
Journal Article |
| Year |
1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
| Volume |
361-362 |
Issue |
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Pages |
569-573 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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Edition |
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| ISSN |
0039-6028 |
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| Notes |
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no |
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Serial |
1609 |
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| Author |
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
| Title |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
Type |
Journal Article |
| Year |
1996 |
Publication |
J. of Communications Technology and Electronics |
Abbreviated Journal |
J. of Communications Technology and Electronics |
| Volume |
41 |
Issue |
5 |
Pages |
408-414 |
| Keywords |
submillimeter waves, transmission |
| Abstract |
A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
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Edition |
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| ISSN |
1064-2269 |
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| Notes |
Радиотехника и электроника 41, no. 4 (1996): 441-447 |
Approved |
no |
| Call Number |
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Serial |
1611 |
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| Author |
Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
| Title |
Hot electron mixers for THz applications |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 30th ESLAB |
Abbreviated Journal |
Proc. 30th ESLAB |
| Volume |
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Issue |
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Pages |
207-210 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K. |
| Address |
Noordwijk, Netherlands |
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Place of Publication |
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Editor |
Rolfe, E. J.; Pilbratt, G. |
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Submillimetre and Far-Infrared Space Instrumentation |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1606 |
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| Author |
Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
| Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
290-302 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Place of Publication |
Charlottesville, Virginia, USA |
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no |
| Call Number |
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Serial |
266 |
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