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Bell M, Kaurova N, Divochiy A, Gol'tsman G, Bird J, Sergeev A, et al. On the nature of resistive transition in disordered superconducting nanowires. IEEE Trans Appl Supercond. 2007;17(2):267–70.
Abstract: Hot-electron single-photon counters based on long superconducting nanowires are starting to become popular in optical and infrared technologies due to their ultimately high sensitivity and very high response speed. We investigate intrinsic fluctuations in long NbN nanowires in the temperature range of 4.2 K-20 K, i.e. above and below the superconducting transition. These fluctuations are responsible for fluctuation resistivity and also determine the noise in practical devices. Measurements of the fluctuation resistivity were performed at low current densities and also in external magnetic fields up to 5 T. Above the BCS critical temperature T co the resistivity is well described by the Aslamazov-Larkin (AL) theory for two-dimensional samples. Below T co the measured resistivity is in excellent agreement with the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory developed for one-dimensional superconductors. Despite that our nanowires of 100 nm width are two-dimensional with respect to the coherence length, our analysis shows that at relatively low current densities the one-dimensional LAMH mechanism based on thermally induced phase slip centers dominates over the two-dimensional mechanism related to unbinding of vortex-antivortex pairs below the Berezinskii-Kosterlitz-Thouless transition.
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Sobolewski R, Verevkin A, Gol'tsman GN, Lipatov A, Wilsher K. Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond.. 2003;13(2):1151–7.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
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Smirnov KV, Vakhtomin YB, Divochiy AV, Ozhegov RV, Pentin IV, Gol'tsman GN. Infrared and terahertz detectors on basis of superconducting nanostructures. In: IEEE, editor. Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf.; 2010. p. 823–4.
Abstract: Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.
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Мошкова МА, Дивочий АВ, Морозов ПВ, Антипов АВ, Вахтомин ЮБ, Смирнов КВ. Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора. In: Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского. МИЭМ НИУ ВШЭ; 2019. p. 201–2.
Abstract: Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения.
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Смирнов КВ. Создание приборов на сверхпроводниковых счетчиках фотонов и методов диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках. Министерство образования и науки РФ; 2009.
Abstract: Этап №1 (дата окончания: 30.09.2009)
Разработана методика изготовления сверхпроводниковых однофотонных детекторов (SSPD) с монокристаллической структурой пленки сверхмалой толщины. Изготовлены экспериментальные образцы сверхпроводниковых однофотонных детекторов (SSPD). Разработана методика пакетирования сверхпроводникового однофотонного детектора в оптический узел с одномодовым оптоволокном. Изготовлены экспериментальные образцы приемных модулей на основе однофотонных сверхпроводниковых детекторов из NbN-нанопленок.
Этап №2 (дата окончания: 28.10.2009)
Разработаны методы диагностики КМОП микросхем, гетероструктур и лазеров на квантовых точках и методика измерения мощности излучения полупроводниковых лазеров на квантовых точках с использованием сверхпроводниковых однофотонных детекторов (SSPD). Проведена технико-экономическая оценка рыночного потенциала полученных результатов.
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