Zinoni C, Alloing B, Li LH, Marsili F, Fiore A, Lunghi L, et al. Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)]. Appl Phys Lett. 2010;96(8):089901.
Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Terai H, Miki S, Yamashita T, Makise K, Wang Z. Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors. Appl Phys Lett. 2010;97(11):3.
Abstract: A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit.
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Gaggero A, Nejad SJ, Marsili F, Mattioli F, Leoni R, Bitauld D, et al. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl Phys Lett. 2010;97(15):3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Mannino G, Spinella C, Ruggeri R, La Magna A, Fisicaro G, Fazio E, et al. Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation. Appl Phys Lett. 2010;97(2):3.
Abstract: We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Kataoka T, Kajikawa K, Kitagawa J, Kadoya Y, Takemura Y. Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm. Appl Phys Lett. 2010;97:201110 (1–3).
Abstract: The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems.
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