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Author Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N.
Title Superconducting hot-electron bolometer mixer as element of thermal imager matrix Type Journal Article
Year 2010 Publication Tech. Phys. Lett. Abbreviated Journal Tech. Phys. Lett.
Volume (up) 36 Issue 11 Pages 1006-1008
Keywords HEB mixers
Abstract The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7850 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1390
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Author Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E.
Title Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies Type Journal Article
Year 2001 Publication Infrared Physics & Technology Abbreviated Journal Infrared Physics & Technology
Volume (up) 42 Issue 1 Pages 41-47
Keywords NbN HEB mixers, anti-reflection coating
Abstract Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1350-4495 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1548
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
Title Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons Type Journal Article
Year 2010 Publication Semicond. Abbreviated Journal Semicond.
Volume (up) 44 Issue 11 Pages 1427-1429
Keywords 2DEG, AlGaAs/GaAs heterostructures mixers
Abstract The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Approved no
Call Number Serial 1216
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Author Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume (up) 47 Issue 12 Pages 2519-2527
Keywords NbN HEB mixers
Abstract New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1557-9670 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1560
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics
Volume (up) 48 Issue 6 Pages 671-675
Keywords NbN HEB mixers
Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
Address
Corporate Author Thesis
Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no
Call Number Vakhtomin2003 Serial 1522
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