|
|
Stéphane Claude. Sideband-separating SIS mixer for ALMA band 7, 275–370 GHz. In: Proc. 14th Int. Symp. Space Terahertz Technol. Tucson, USA; 2003. 41.
|
|
|
|
Grimes P, Kittara P, Yassin G, Withington S, Jacobs K. Investigation of the performance of a 700 GHz nline mixer. In: Proc. 14th Int. Symp. Space Terahertz Technol. Tucson, USA; 2003. 247.
|
|
|
|
Hajenius M, Baselmans JJA, Gao JR, Klapwijk TM, de Korte PAJ, Voronov B, et al. Improved NbN phonon cooled hot electron bolometer mixers. In: Proc. 14th Int. Symp. Space Terahertz Technol. Tucson, USA; 2003. p. 413–23.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.
|
|
|
|
Albert Betz, Rita Boreiko, Yongdong Zhou, Jun Jhao, Yusuf Selamet, Yong Chang, et al. HgCdTe photoconductive mixers for 3-15 terahertz. In: Proc. 14th Int. Symp. Space Terahertz Technol. Tucson, USA; 2003. p. 102–11.
|
|
|
|
Finkel M, Vachtomin Y, Antipov S, Drakinski V, Kaurova N, Voronov B, et al. Gain bandwidth and noise temperature of NbTiN HEB mixer. In: Proc. 14th Int. Symp. Space Terahertz Technol.; 2003. p. 276–85.
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
|
|
