Abstract: We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with T_c 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm². The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10^-2 %. The dark (false) count rate at 2 K is as low as 2x10^-4 s,^-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10^-18 WHz^-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-T_c materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm.

Abstract: We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm² with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as  30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was  20% and decreased exponentially with the wavelength reaching  0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10^-21 W/Hz^-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.

Abstract: We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10^-18 W/Hz^1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.