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Maslennikov S, Vachtomin Y, Antipov S, Smirnov K, Kaurova N, Grishina E, et al. NbN HEB mixers for frequencies of 2.5 and 3.8 THz. In: Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10). Moscow; 2004.
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Vachtomin YB, Antipov SV, Kaurova NS, Maslennikov SN, Smirnov KV, Polyakov SL, et al. Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In: Proc. 29th IRMMW / 12th THz. Karlsruhe, Germany; 2004. p. 329–30.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
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Kaurova NS, Finkel MI, Maslennikov SN, Vahtomin YB, Antipov SV, Smirnov KV, et al. Submillimeter mixer based on YBa2Cu3O7-x thin film. In: Proc. 1-st conf. Fundamental problems of high temperature superconductivity. Moscow-Zvenigorod; 2004. 291.
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Cao A, Jiang L, Chen SH, Antipov SV, Shi SC. IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer. In: Proc. International conference on microwave and millimeter wave technology. Builin; 2007. p. 1–3.
Abstract: In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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Antipov S, Trifonov A, Krause S, Meledin D, Desmaris V, Belitsky V, et al. Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In: Proc. 28th Int. Symp. Space Terahertz Technol.; 2017. p. 147–8.
Abstract: In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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