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Author |
Boogaard, G.R.; Verbruggen, A.H.; Belzig, W.; Klapwijk T.M. |
Title |
Resistance of superconducting nanowires connected to normal-metal leads |
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Journal Article |
Year |
2004 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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69 |
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220503(R)(1-4) |
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Abstract |
We study experimentally the low temperature resistance of superconducting nanowires connected to normal metal reservoirs. Wefind that a substantial fraction of the nanowires is resistive, down to the lowest tempera-ture measured, indicative of an intrinsic boundary resistance due to the Andreev-conversion of normal current to supercurrent. The results are successfully analyzed in terms of the kinetic equations for diffusive superconductors. |
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RPLAB @ atomics90 @ |
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960 |
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Author |
Su, M. Y.; Carter, S. G.; Sherwin, M. S. |
Title |
Strong-field terahertz optical mixing in excitons |
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Journal Article |
Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume ![sorted by Volume (numeric) field, descending order (down)](img/sort_desc.gif) |
67 |
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12 |
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optical mixing |
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1098-0121 |
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500 |
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Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
Title |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
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Journal Article |
Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume ![sorted by Volume (numeric) field, descending order (down)](img/sort_desc.gif) |
67 |
Issue |
13 |
Pages |
132508 (1 to 4) |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C. |
Title |
Optical control of photon tunneling through an array of nanometer-scale cylindrical channels |
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Journal Article |
Year |
2002 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume ![sorted by Volume (numeric) field, descending order (down)](img/sort_desc.gif) |
66 |
Issue |
20 |
Pages |
205414_1-205414_5 |
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optical mixing |
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1098-0121 |
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499 |
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Author |
Sergeev, A.; Mitin, V. |
Title |
Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
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Journal Article |
Year |
2000 |
Publication |
Phys. Rev. B. |
Abbreviated Journal |
Phys. Rev. B. |
Volume ![sorted by Volume (numeric) field, descending order (down)](img/sort_desc.gif) |
61 |
Issue |
9 |
Pages |
6041-6047 |
Keywords |
disordered conductors, scattering potential, electron-phonon interaction |
Abstract |
Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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307 |
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