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Huebers H-W, Semenov A, Richter H, Birk M, Krocka M, Mair U, et al. Superconducting hot electron bolometer as mixer for far-infrared heterodyne receivers. In: Phillips TG, Zmuidzinas J, editors. Proc. SPIE. Vol 4855. Tucson, USA: SPIE; 2003. p. 395–401. (Presented at the Society of Photo-Optical Instrumentation Engineers (SPIE) Conference; vol 4855).
Abstract: Heterodyne receivers for applications in astronomy need quantum limited sensitivity. In instruments which are currently under development for SOFIA or Herschel superconducting hot electron bolometers (HEB) will be used to achieve this goal at frequencies above 1.4 THz. We present results of the development of a phonon-cooled NbN HEB mixer for GREAT, the German Receiver for Astronomy at Terahertz Frequencies, which will be flown aboard SOFIA. The mixer is a small superconducting bridge incorporated in a planar feed antenna and a hyperhemispherical lens. Mixers with logarithmic-spiral and double-slot feed antennas have been investigated with respect to their noise temperature, conversion loss, linearity and beam pattern. At 2.5 THz a double sideband noise temperature of 2200 K was achieved. The conversion loss was 17 dB. The response of the mixer was linear up to 400 K load temperature. The performance was verified by measuring an emission line of methanol at 2.5 THz. The measured linewidth is in good agreement with the linewidth deduced from pressure broadening measurements at millimeter wavelength. The results demonstrate that the NbN HEB is very well suited as a mixer for far-infrared heterodyne receivers.
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Cherednichenko S, Khosropanah P, Adam A, Merkel HF, Kollberg EL, Loudkov D, et al. 1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory. In: Phillips TG, Zmuidzinas J, editors. Proc. SPIE. Vol 4855. SPIE; 2003. p. 361–70.
Abstract: NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope.
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Amato MJ, Benford DJ, Moseley HS, Juan Roman. An engineering concept and enabling technologies for a large single aperture far-infrared observatory (SAFIR). In: Proc. SPIE. Vol 4850.; 2003. p. 1120–31.
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Verevkin AA, Zhang J, Slysz W, Sobolewski R, Lipatov AP, Okunev O, et al. Superconducting single-photon detectors for GHz-rate free-space quantum communications. In: Ricklin JC, Voelz DG, editors. Proc. SPIE. Vol 4821. SPIE; 2002. p. 447–54.
Abstract: We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography.
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Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, et al. Progress in far-infrared detection technology. In: Proc. SPIE. Vol 4795.; 2002. p. 121–8. (Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series).
Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
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