Abstract: A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.

Abstract: Kinetic Inductance detectors have held a promise for the last decade to enable very large arrays, in excess of 10.000 pixels, with background limited sensitivity for ground- and Space Based sub-mm observatories. First we present the development of the detector chips of the A-MKID instrument: These chips contain up to 5400 detector pixel divided over up to 5 readout lines for the 350 GHz and 850 GHz atmospheric windows. The individual detectors are lens antenna coupled KIDs made of NbTiN and Aluminium that reach photon noise limited sensitivity at sky loading levels in excess of a few fW per pixel using either phase readout or amplitude readout. The ability to use phase readout is crucial as it reduces the requirements on the readout electronics of the instrument. Cross coupling between the KID resonators was mitigated by a combination of numerical simulations and a suitable position encoding of the readout resonance frequencies of the individual pixels. Beam pattern measurements are performed to demonstrate the absence of any cross talk due to resonator- resonator cross coupling. Second we present experiments on individual lens-antenna coupled detectors at 1.5 THz that are made out of aluminium. With these devices we have observed, as a function of the irradiated power at 1.5 THz, the crossover from photon noise limited performance to detector-limited performance at loading powers less than 0.1 fW. In the latter limit the device is limited by intrinsic fluctuations in the Cooper pair and quasiparticle number, i.e. Generation-Recombination noise. This results in a sensitivity corresponding to a NEP = 3.8·10 -19 W/√(Hz).

Abstract: We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999).