Kawamura J, Blundell R, Tong C-YE, Papa DC, Hunter TR, Gol'tsman G, et al. First light with an 800 GHz phonon-cooled HEB mixer receiver. In: Proc. 9th Int. Symp. Space Terahertz Technol. Pasadena, California, USA; 1998. p. 35–43.
Abstract: Phonon-cooled superconductive hot-electron bolometric (HEB) mixers are incorporated in a waveguide receiver designed to operate near 800 Gliz. The mixer elements are thin-film nio- bium nitride microbridges with dimensions of 4 nm thickness, 0.2 to 0.3 p.m in length and 2 jun in width. At 780 GHz the best receiver noise temperature is 840 K (DSB). The mixer IF bandwidth is 2.0 GHz, the absorbed LO power is —0.1 1.1W. A fixed-tuned version of the re- ceiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, Arizona, to conduct astronomical observations. These observations represent the first time that a receiver incorporating any superconducting HEB mixer has been used to detect a spectral line of celes- tial origin.
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Kawamura J, Blundell R, Tong C-YE, Papa DC, Hunter TR, Paine St. N, et al. Superconductive hot-electron bolometer mixer receiver for 800 GHz operation. Vol 48.; 2000.
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Hübers H-W, Semenov A, Schubert J, Gol'tsman G, Voronov B, Gershenzon E. Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz. In: Proc. 8-th Int. Conf. on Terahertz Electronics.; 2000. p. 117–9.
Abstract: We report on the phonon cooled NbN hot electron bolometer as mixer in the terahertz frequency range. Its hybrid antenna consists of a hyperhemispheric silicon lens and a logarithmic-spiral feed antenna. Noise temperatures have been measured between 0.7 THz and 5.2 THz. A quarter wavelength layer of Parylene works as antireflection coating for the silicon lens and reduces the noise temperature by about 30. It was found that the antenna pattern at 2.5 THz is determined by the feed antenna and not by the diameter of the lens.
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Gol'tsman G, Semenov A, Smirnov K, Voronov B. Background limited quantum superconducting detector for submillimeter wavelengths. In: Proc. 12th Int. Symp. Space Terahertz Technol.; 2001. p. 469–75.
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Vahtomin YB, Finkel MI, Antipov SV, Voronov BM, Smirnov KV, Kaurova NS, et al. Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In: Harvard university, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 259–70.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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