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Корнеев АА, Окунев ОВ, Чулкова ГМ, Смирнов КВ, Милостная ИИ, Минаева ОВ, et al. Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках. МПГУ; 2015.
Abstract: Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики.
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Beebe MR, Beringer DB, Burton MC, Yang K, Lukaszew RA. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2016;34(2):021510 (1 to 4).
Abstract: The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB2 thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature TC, the authors are the first to report on the correlation between stoichiometry and the lower critical field HC1.
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Titova NA, Baeva EM, Kardakova AI, Goltsman GN. Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012190.
Abstract: Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
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Manova NN, Simonov NO, Korneeva YP, Korneev AA. Developing of NbN films for superconducting microstrip single-photon detector. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012116 (1 to 5).
Abstract: We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20.
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Baeva EM, Titova NA, Veyrat L, Sacépé B, Semenov AV, Goltsman GN, et al. Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates. Phys Rev Applied. 2021;15(5):054014.
Abstract: We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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