Maingault L, Tarkhov M, Florya I, Semenov A, Espiau de Lamaëstre R, Cavalier P, et al. Spectral dependency of superconducting single photon detectors. J Appl Phys. 2010;107(11):116103 (1 to 3).
Abstract: We investigate the effect of varying both incoming optical wavelength and width of NbN nanowires on the superconducting single photon detectors (SSPD) detection efficiency. The SSPD are current biased close to critical value and temperature fixed at 4.2 K, far from transition. The experimental results are found to verify with a good accuracy predictions based on the “hot spot model,” whose size scales with the absorbed photon energy. With larger optical power inducing multiphoton detection regime, the same scaling law remains valid, up to the three-photon regime. We demonstrate the validity of applying a limited number of measurements and using such a simple model to reasonably predict any SSPD behavior among a collection of nanowire device widths at different photon wavelengths. These results set the basis for designing efficient single photon detectors operating in the infrared (2–5 μm range).
This work was supported by European projects FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433) and IP “QAP” (Contract No. 15848).
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Zinoni C, Alloing B, Li LH, Marsili F, Fiore A, Lunghi L, et al. Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)]. Appl Phys Lett. 2010;96(8):089901.
Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Baek B, Lita AE, Verma V, Nam SW. Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm. Appl Phys Lett. 2011;98(25):3.
Abstract: We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Marsili F, Najafi F, Dauler E, Bellei F, Hu X, Csete M, et al. Single-photon detectors based on ultranarrow superconducting nanowires. Nano Lett. 2011;11(5):2048–2053.
Abstract: We report efficient single-photon detection (η = 20% at 1550 nm wavelength) with ultranarrow (20 and 30 nm wide) superconducting nanowires, which were shown to be more robust to constrictions and more responsive to 1550 nm wavelength photons than standard superconducting nanowire single-photon detectors, based on 90 nm wide nanowires. We also improved our understanding of the physics of superconducting nanowire avalanche photodetectors, which we used to increase the signal-to-noise ratio of ultranarrow-nanowire detectors by a factor of 4, thus relaxing the requirements on the read-out circuitry and making the devices suitable for a broader range of applications.
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Manova NN, Korneeva YP, Korneev AA, Slysz W, Voronov BM, Gol'tsman GN. Superconducting NbN single-photon detector integrated with quarter-wave resonator. Tech Phys Lett. 2011;37(5):469–71.
Abstract: The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied.
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