Abstract: Traditionally, photon detectors are operated in a direct detection mode counting incident photonswith a known quantum efficiency. This procedure allows one to detect weak sources of radiation but allthe information about its frequency is limited by the optical filtering/resonating structures used which arenot as precise as would be required for some practical applications. In this work we propose heterodynereceiver based on a photon counting mixer which would combine excellent sensitivity of a photon countingdetector and excellent spectral resolution given by the heterodyne technique. At present, Superconducting-Nanowire-Single-Photon-Detectors (SNSPDs) [1] are widely used in a variety of applications providing thebest possible combination of the sensitivity and speed. SNSPDs demonstrate lack of drawbacks like highdark count rate or autopulsing, which are common for traditional semiconductor-based photon detectors,such as avalanche photon diodes.In our study we have investigated SNSPD operated as a photon counting mixer. To fully understandits behavior in such a regime, we have utilized experimental setup based on a couple of distributedfeedback lasers irradiating at 1.5 micrometers, one of which is being the Local Oscillator (LO) and theother mimics the test signal [2]. The SNSPD was operated in the current mode and the bias currentwas slightly below of the critical current. Advantageously, we have found that LO power needed for anoptimal mixing is of the order of hundreds of femtowatts to a few picowatts, which is promising for manypractical applications, such as receiver matrices [3]. With use of the two lasers, one can observe thevoltage pulses produced by the detected photons, and the time distribution of the pulses reproduces thefrequency difference between the lasers, forming power response at the intermediate frequency which canbe captured by either an oscilloscope (an analysis of the pulse statistics is needed) or by an RF spectrumanalyzer. Photon-counting nature of the detector ensures quantum-limited sensitivity with respect to theoptical coupling achieved. In addition to the chip SNSPD with normal incidence coupling, we use thedetectors with a travelling wave geometry design [4]. In this case a NbN nanowire is placed on the topof a Si3N4 nanophotonic waveguide, thus increasing the efficient interaction length. For this reason it ispossible to achieve almost complete absorption of photons and reduce the detector footprint. This reducesthe noise of the device together with the expansion of the bandwidth. Integrated device scheme allowsus to measure the optical losses with high accuracy. Our approach is fully scalable and, along with alarge number of devices integrated on a single chip can be adapted to the mid and far IR ranges wherephoton-counting measurement may be beneficial as well [5].Acknowledgements: This work was supported in part by the Ministry of Education and Science of theRussian Federation, contract No. 14.B25.31.0007 and by RFBR grant No. 16-32-00465.

Abstract: Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.

Abstract: Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.