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Sergeev A, Semenov A, Trifonov V, Karasik B, Gol'tsman G, Gershenzon E. Heat transfer in YBaCuO thin film/sapphire substrate system. J Supercond. 1994;7(2):341–4.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Gousev YP, Semenov AD, Gol'tsman GN, Sergeev AV, Gershenzon EM. Electron-phonon interaction in disordered NbN films. Phys B Condens Mat. 1994;194-196:1355–6.
Abstract: Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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Gol'tsman GN, Karasik BS, Okunev OV, Dzardanov AL, Gershenzon EM, Ekstrom H, et al. NbN hot electron superconducting mixers for 100 GHz operation. IEEE Trans Appl Supercond. 1995;5(2):3065–8.
Abstract: NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
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Zorin M, Gol'tsman GN, Karasik BS, Elantev AI, Gershenzon EM, Lindgren M, et al. Optical mixing in thin YBa2Cu3O7-x films. IEEE Trans Appl Supercond. 1995;5(2):2431–4.
Abstract: High quality, j/sub c/ (77 K)>10/sup 6/ A/cm/sup 2/, epitaxial YBa2Cu3O7-x films of 50 nm thickness were patterned into ten parallel 1 /spl mu/m wide strips. The film structure was coupled to a single-mode fiber. Mixer response was obtained at 0.78 /spl mu/m using laser frequency modulation and an optical delay line. Using two semiconductor lasers at 1.55 /spl mu/m wavelength the beating signal was used to measure the photoresponse up to 18 GHz. Nonequilibrium photoresponse in the resistive state of the superconductor was observed. Bolometric response dominates up to 3 GHz, after which the nonequilibrium response is constant up to the frequency limit of our registration system. Using an electron heating model the influence of different thermal processes on the conversion loss has been analyzed. Ways of increasing the sensitivity are also discussed.
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Karasik BS, Milostnaya II, Zorin MA, Elantev AI, Gol'tsman GN, Gershenzon EM. High speed current switching of homogeneous YBaCuO film between superconducting and resistive states. IEEE Trans Appl Supercond. 1995;5(2):3042–5.
Abstract: Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
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