Records |
Author |
Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. |
Title |
Membrane-based HEB mixer for THz applications |
Type |
Conference Article |
Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
5116 |
Issue |
|
Pages |
551-562 |
Keywords |
membrane NbN HEB mixers, heterodyne receiver, stress-less membrane, coupling efficiency, submillimeter-waves frequency, low-cost space applications |
Abstract |
We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
SPIE |
Place of Publication |
|
Editor |
Chiao, J.-C.; Varadan, V.K.; Cané, C. |
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
Smart Sensors, Actuators, and MEMS |
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1520 |
Permanent link to this record |
|
|
|
Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
Type |
Journal Article |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
|
Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
Keywords |
RSFQ, NbN, SIS |
Abstract |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1081 |
Permanent link to this record |