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| Author | Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V. | ||||
| Title | Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon | Type | Journal Article | ||
| Year | 2010 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 96 | Issue | 22 | Pages | 3 |
| Keywords | SNSPD | ||||
Abstract  |
Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 655 | ||
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| Author | Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. | ||||
| Title | Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 91 | Issue | 6 | Pages | 062504 (1 to 3) |
| Keywords | NbN films, nanofilms | ||||
| Abstract |
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1425 | |||
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| Author | Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Superconducting single photon detectors made by local oxidation with an atomic force microscope | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 90 | Issue | 19 | Pages | 191116 (1 t0 3) |
| Keywords | SSPD | ||||
| Abstract |
The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K. The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 423 | |||
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| Author | Walther, Christoph; Scalari, Giacomo; Faist, Jerome; Beere, Harvey; Ritchie, David | ||||
| Title | Low frequency terahertz quantum cascade laser operating from 1.6 to 1.8 THz | Type | Journal Article | ||
| Year | 2006 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 89 | Issue | Pages | 231121(1-3) | |
| Keywords | QCL, 360 uW at 1.6 THz | ||||
| Abstract |
The authors report a GaAs/Al0.1Ga0.9As quantum cascade laser based on a bound-to-continuum transition optimized for low frequency operation. High tunability of the gain curve is achieved by the Stark effect and laser emission is measured between 1.6 and 1.8 THz. Pulsed mode operation up to 95 K and continuous wave operation up to 80 K are reported. The dynamical range in current is as high as 43%. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 629 | |||
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| Author | Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. | ||||
| Title | Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 91 | Issue | 3 | Pages | 031106 (1 to 3) |
| Keywords | SSPD, SNSPD, APD | ||||
| Abstract |
The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots. This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Erratum: 1395 | Approved | no | ||
| Call Number | Serial | 1396 | |||
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