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Author (up) Sprengers, J. P.; Gaggero, A.; Sahin, D.; Jahanmirinejad, S.; Frucci, G.; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A. openurl 
  Title Waveguide superconducting single-photon detectors for integrated quantum photonic circuits Type Journal Article
  Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 99 Issue 18 Pages 181110(1-3)  
  Keywords optical waveguides, waveguide SSPD  
  Abstract The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (~0%) at telecom wavelengths, high timing accuracy (~0 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators.  
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  Notes Approved no  
  Call Number Serial 847  
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Author (up) Stevens, M.; Hadfield, R.; Schwall, R.; Nam, S.W.; Mirin, R.; Gupta, J. doi  openurl
  Title Fast lifetime measurements of infrared emitters using a low-jitter superconduct- ing single-photon detector Type Journal Article
  Year 2006 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 89 Issue Pages 031109  
  Keywords SSPD, jitter, QD, QW  
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  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 611  
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Author (up) Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. doi  openurl
  Title Current distribution and transition width in superconducting transition-edge sensors Type Journal Article
  Year 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 101 Issue Pages 242603  
  Keywords  
  Abstract Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.  
  Address TES, current distribution  
  Corporate Author Thesis  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 930  
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Author (up) Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Zwiller, V.; Latta, C.; Bohi, P.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.; Pearlman, A.; Cross, A.; Komissarov, I.; Verevkin, A.; Sobolewski, R. url  doi
openurl 
  Title Fiber-coupled single-photon detectors based on NbN superconducting nanostructures for practical quantum cryptography and photon-correlation studies Type Journal Article
  Year 2006 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 88 Issue 26 Pages 261113 (1 to 3)  
  Keywords SSPD, SNSPD  
  Abstract We have fabricated and tested a two-channel single-photon detector system based on two fiber-coupled superconducting single-photon detectors (SSPDs). Our best device reached the system quantum efficiency of 0.3% in the 1540-nm telecommunication wavelength with a fiber-to-detector coupling factor of about 30%. The photoresponse consisted of 2.5-ns-wide voltage pulses with a rise time of 250ps and timing jitter below 40ps. The overall system response time, measured as a second-order, photon cross-correlation function, was below 400ps. Our SSPDs operate at 4.2K inside a liquid-helium Dewar, but their optical fiber inputs and electrical outputs are at room temperature. Our two-channel detector system should find applications in practical quantum cryptography and in antibunching-type quantum correlation measurements.

The authors would like to thank Dr. Marc Currie for his assistance in early time-resolved photoresponse measurements and Professor Atac Imamoglu for his support. This work was supported by the Polish Ministry of Science under Project No. 3 T11B 052 26 (Warsaw), RFBR 03-02-17697 and INTAS 03-51-4145 grants (Moscow), CRDF Grant No. RE2-2531-MO-03 (Moscow), RE2-2529-MO-03 (Moscow and Rochester), and US AFOSR FA9550-04-1-0123 (Rochester). Additional funding was provided by the grants from the MIT Lincoln Laboratory and BBN Technologies Corp.
 
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  ISSN 0003-6951 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1449  
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Author (up) Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V. openurl 
  Title Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon Type Journal Article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 96 Issue 22 Pages 3  
  Keywords SNSPD  
  Abstract Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 655  
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