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Author Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A.
Title Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 15 Pages 3
Keywords SSPD
Abstract We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Call Number RPLAB @ gujma @ Serial 681
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Author Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio
Title Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation Type Journal Article
Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 97 Issue 2 Pages 3
Keywords Annealing
Abstract We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
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Call Number RPLAB @ gujma @ Serial 691
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Author Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R.
Title Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 4 Pages 3
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Abstract Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
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Call Number RPLAB @ gujma @ Serial 697
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Author Hoevers, H. F. C.; Bento, A. C.; Bruijn, M. P.; Gottardi, L.; Korevaar, M. A. N.; Mels, W. A.; de Korte, P. A. J.
Title Thermal fluctuation noise in a voltage biased superconducting transition edge thermometer Type Journal Article
Year 2000 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 77 Issue 26 Pages 4421-4424
Keywords TES; bolometer; thermal fluctuation noise; TFN
Abstract The current noise at the output of a microcalorimeter with a voltage biased superconducting transition edge thermometer is studied in detail. In addition to the two well-known noise sources: thermal fluctuation noise from the heat link to the bath and Johnson noise from the resistive thermometer, a third noise source strongly correlated with the steepness of the thermometer is required to fit the measured noise spectra. Thermal fluctuation noise, originating in the thermometer itself, fully explains the additional noise. A simple model provides quantitative agreement between the observed and calculated noise spectra for all bias points in the superconducting transition.
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Call Number RPLAB @ gujma @ Serial 759
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Author Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G.
Title Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers Type Journal Article
Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 72 Issue 12 Pages 1516-1518
Keywords HEB mixer; thermal fluctuation noise; TFN
Abstract A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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Call Number RPLAB @ gujma @ Serial 760
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