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| Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
| Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
| Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 112 | Issue  |
14 | Pages | 141101 (1 to 5) |
| Keywords | graphene field effect transistors, FET | ||||
| Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1309 | |||
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| Author | Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. | ||||
| Title | Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers | Type | Journal Article | ||
| Year | 2001 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 79 | Issue |
15 | Pages | 2483-2485 |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 311 | |||
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| Author | Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. | ||||
| Title | Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications | Type | Journal Article | ||
| Year | 2010 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 97 | Issue |
15 | Pages | 3 |
| Keywords | SSPD | ||||
| Abstract | We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 681 | ||
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| Author | Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
| Title | Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires | Type | Journal Article | ||
| Year | 2015 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 106 | Issue |
15 | Pages | 151101 (1 to 5) |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1211 | |||
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| Author | Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vahtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Direct detection effect in small volume hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2005 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 86 | Issue |
16 | Pages | 163503 (1 to 3) |
| Keywords | HEB, mixer, direct detection effect | ||||
| Abstract | We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 377 | |||
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