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Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Generating visible single photons on demand with single InP quantum dots |
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Journal Article |
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2003 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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82 |
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10 |
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1509-1511 |
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single photon, quantum dot, InP |
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0003-6951 |
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503 |
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Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K. |
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Title |
Electrothermal simulation of superconducting nanowire avalanche photodetectors |
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Journal Article |
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Year |
2011 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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98 |
Issue |
9 |
Pages |
3 |
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Keywords |
SNAP |
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We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results. |
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RPLAB @ gujma @ |
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658 |
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Baek, Burm; Lita, Adriana E.; Verma, Varun; Nam, Sae Woo |
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Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm |
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Journal Article |
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2011 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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98 |
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25 |
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3 |
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SNSPD |
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We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates. |
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665 |
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Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V. |
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Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
96 |
Issue |
22 |
Pages |
3 |
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SNSPD |
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Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter. |
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RPLAB @ gujma @ |
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655 |
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Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. |
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Superconducting single photon detectors made by local oxidation with an atomic force microscope |
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2007 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
90 |
Issue |
19 |
Pages |
191116 (1 t0 3) |
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SSPD |
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The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K.
The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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0003-6951 |
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423 |
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