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Author Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G.
Title A comparison of VN and NbN thin films towards optimal SNSPD efficiency Type Journal Article
Year 2021 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 31 Issue 5 Pages 1-4
Keywords NbN SSPD, SNSPD, WSi
Abstract Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.
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ISSN (up) 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 1223
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Author Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M.
Title Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 1-4
Keywords TiN MKID
Abstract We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
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ISSN (up) 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1296
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Author Korneev, A.; Korneeva, Y.; Florya, I.; Semenov, A.; Goltsman, G.
Title Photon switching statistics in multistrip superconducting single-photon detectors Type Journal Article
Year 2018 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 28 Issue 7 Pages 1-4
Keywords SSPD, SNSPD
Abstract We study photon count statistics in superconducting single-photon detectors consisting of up to 70 narrow superconducting strips connected in parallel. Using interarrival time analysis, we demonstrate that our samples are operated in the “arm-trigger” regime and require up to seven subsequently absorbed photons to form a resistive state in the whole sample. We also performed numerical simulation of the light and dark count rates versus detector bias current, which are in good agreement with the experimental results.
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ISSN (up) 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1304
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
Title Development of a silicon membrane-based multipixel hot electron bolometer receiver Type Journal Article
Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 1-5
Keywords Multi-pixel, NbN HEB, silicon-on-insulator, horn array
Abstract We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN (up) 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1324
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Author Korneeva, Y.; Florya, I.; Vdovichev, S.; Moshkova, M.; Simonov, N.; Kaurova, N.; Korneev, A.; Goltsman, G.
Title Comparison of hot spot formation in nbn and mon thin superconducting films after photon absorption Type Journal Article
Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 1-4
Keywords MoNx SSPD
Abstract In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN ∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN (up) 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1325
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