toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. url  openurl
  Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
  Year 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 64 Issue 4 Pages 889-897  
  Keywords Ge, trapping of free carriers  
  Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1707  
Permanent link to this record
 

 
Author (up) Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. url  openurl
  Title Energy spectrum of free excitons in germanium Type Journal Article
  Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 18 Issue 3 Pages 93  
  Keywords Ge, free excitons, energy spectrum  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1734  
Permanent link to this record
 

 
Author (up) Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
  Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 40 Issue 2 Pages 311-315  
  Keywords Ge, cyclotron resonance  
  Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1768  
Permanent link to this record
 

 
Author (up) Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. openurl 
  Title Character of submillimeter photoconductivity in n-lnSb Type Journal Article
  Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 49 Issue 1 Pages 121-128  
  Keywords  
  Abstract A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 985  
Permanent link to this record
 

 
Author (up) Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. url  openurl
  Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
  Year 1975 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 22 Issue 4 Pages 95-97  
  Keywords Ge, impurities, excited states, absorption spectra  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1773  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: