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Author  |
Gabay, Marc; Triscone, Jean-Marc |
| Title |
Superconductors: Terahertz superconducting switch |
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Journal Article |
| Year |
2011 |
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Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
| Volume |
5 |
Issue |
8 |
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447-449 |
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fromIPMRAS |
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The use of terahertz pulses to 'gate' interlayer charge transport in a superconductor could lead to a variety of new and interesting applications. |
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RPLAB @ gujma @ |
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777 |
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| Author |
Gao, Jie; McMillan, James F.; Wong, Chee Wei |
| Title |
Nanophotonics: Remote on-chip coupling |
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Journal Article |
| Year |
2012 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
| Volume |
6 |
Issue |
1 |
Pages |
7-8 |
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fromIPMRAS |
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Scientists have demonstrated strongly coupled photon states between two distant high-Q photonic crystal cavities connected by a photonic crystal waveguide. Remote dynamic control over the coupled states could aid the development of delay lines, optical buffers and qubit operations in both classical and quantum information processing. |
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779 |
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| Author |
Goulielmakis, Eleftherios |
| Title |
Attosecond photonics: Extreme ultraviolet catastrophes |
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Journal Article |
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2012 |
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Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
| Volume |
6 |
Issue |
3 |
Pages |
142-143 |
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fromIPMRAS |
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Extreme ultraviolet attosecond pulses, which emerge from the interaction of atoms with intense laser fields, play a central role in modern ultrafast science and the exploration of electron behaviour. Recent work now shows that catastrophe theory can help optimize the properties of these pulses. |
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RPLAB @ gujma @ |
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791 |
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Hase, Muneaki; Katsuragawa, Masayuki; Constantinescu, Anca Monia; Petek, Hrvoje |
| Title |
Frequency comb generation at terahertz frequencies by coherent phonon excitation in silicon |
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Journal Article |
| Year |
2012 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
| Volume |
6 |
Issue |
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Pages |
243–247 |
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fromIPMRAS |
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High-order nonlinear light–matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy1. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing2. Third-order nonlinear optical processes in silicon have been used to process optical signals with bandwidths greater than 1 GHz (ref. 2). However, fundamental physical processes for a silicon-based optical modulator in the terahertz bandwidth range have not yet been explored. Here, we demonstrate ultrafast phononic modulation of the optical index of silicon by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical phonon of silicon (15.6 THz) generates a frequency comb up to seventh order. All-optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the silicon crystalline lattice at its highest mechanical frequency. |
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RPLAB @ gujma @ |
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794 |
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He, Rongrui; Sazio, Pier J. A.; Peacock, Anna C.; Healy, Noel; Sparks, Justin R.; Krishnamurthi, Mahesh; Gopalan, Venkatraman; Badding, John V. |
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Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres |
Type |
Journal Article |
| Year |
2012 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
| Volume |
6 |
Issue |
3 |
Pages |
174-179 |
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fromIPMRAS |
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The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres. |
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RPLAB @ gujma @ |
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783 |
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