| Records |
| Author |
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
| Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
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Journal Article |
| Year |
2016 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
93 |
Issue  |
6 |
Pages |
064506 |
| Keywords |
boron-doped diamond films, resistive superconducting state, relaxation time |
| Abstract |
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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2469-9950 |
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1167 |
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Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. |
| Title |
Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields |
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Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
101 |
Issue |
6 |
Pages |
060508 (1 to 6) |
| Keywords |
MoSi, WSi films |
| Abstract |
We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning. |
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2469-9950 |
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1800 |
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Santhanam, P.; Wind, S.; Prober, D. E. |
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Localization, superconducting fluctuations, and superconductivity in thin films and narrow wires of aluminum |
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Journal Article |
| Year |
1987 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
35 |
Issue |
7 |
Pages |
3188-3206 |
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Al films; electron-phonon scattering; electron-electron scattering; Disordered structures; amorphous and glassy solids, Relaxation times and mean free paths, Galvanomagnetic and other magnetotransport effects |
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We report a comprehensive set of experiments on wide and narrow thin-film strips of aluminum which test the predictions of recent localization theory. The experiments on wide films in the two-dimensional regime confirm the theoretical predictions and also yield insight into inelastic mechanisms and spin-orbit scattering rates. Our extension of the existing theory for one-dimensional systems to include spin-orbit scattering and Maki-Thompson superconducting fluctuations is verified by the experiments. We find clear evidence for one-dimensional localization, with inferred inelastic rates identical to those in two-dimensional films. The prediction of the localization theory for a dimensional crossover from two-dimensional to one-dimensional behavior is also confirmed. We have reanalyzed the results of some previous experiments on thin films and narrow wires in light of these results. |
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RPLAB @ gujma @ |
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757 |
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Romijn, J.; Klapwijk, T. M.; Renne, M. J.; Mooij, J. E. |
| Title |
Critical pair-breaking current in superconducting aluminum strips far below Tc |
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Journal Article |
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1982 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
26 |
Issue |
7 |
Pages |
3648-3655 |
| Keywords |
superconducting nanowire |
| Abstract |
Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity. |
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Recommended by Klapwijk |
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925 |
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Sergeev, A.; Mitin, V. |
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Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
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Journal Article |
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2000 |
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Phys. Rev. B. |
Abbreviated Journal |
Phys. Rev. B. |
| Volume |
61 |
Issue |
9 |
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6041-6047 |
| Keywords |
disordered conductors, scattering potential, electron-phonon interaction |
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Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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