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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M.
Title (up) Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 49 Issue 15 Pages 10484-10494
Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy
Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.
Address
Corporate Author Thesis
Publisher American Physical Society Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1005
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Author Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol’tsman, G.
Title (up) One-dimensional resistive states in quasi-two-dimensional superconductors: Experiment and theory Type Journal Article
Year 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 76 Issue 9 Pages 094521 (1 to 5)
Keywords uasi-two-dimensional superconductors, NbN
Abstract We investigate competition between one- and two-dimensional topological excitations—phase slips and vortices—in the formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature TC0. The widths w=100nm of our ultrathin NbN samples are substantially larger than the Ginzburg-Landau coherence length ξ=4nm, and the fluctuation resistivity above TC0 has a two-dimensional character. However, our data show that the resistivity below TC0 is produced by one-dimensional excitations—thermally activated phase slip strips (PSSs) overlapping the sample cross section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current and/or temperature variations. Measuring the resistivity within 7 orders of magnitude, we find that the quantum phase slips can only be essential below this level.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1423
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Author Smolyaninov, I. I.; Zayats, A. V.; Stanishevsky, A.; Davis, C. C.
Title (up) Optical control of photon tunneling through an array of nanometer-scale cylindrical channels Type Journal Article
Year 2002 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 66 Issue 20 Pages 205414_1-205414_5
Keywords optical mixing
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 499
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Author Kozorezov, A. G.; Lambert, C.; Marsili, F.; Stevens, M. J.; Verma, V. B.; Stern, J. A.; Horansky, R.; Dyer, S.; Duff, S.; Pappas, D. P.; Lita, A.; Shaw, M. D.; Mirin, R. P.; Sae Woo Nam
Title (up) Quasiparticle recombination in hotspots in superconducting current-carrying nanowires Type Journal Article
Year 2015 Publication Abbreviated Journal Phys. Rev. B
Volume 92 Issue 6 Pages
Keywords
Abstract We describe a kinetic model of recombination of non-equilibrium quasiparticles generated by single photon absorption in superconducting current-carrying nanowires. The model is developed to interpret two-photon detection experiments in which a single photon does not possess sufficient energy for breaking superconductivity at a fixed low bias current. We show that quasiparticle self- recombination in relaxing hotspot dominates diffusion expansion effects and explains the observed strong bias current, wavelength and temperature dependencies of hotspot relaxation in tungsten silicide superconducting nanowire single-photon detectors.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ alex_kazakov @ Serial 1003
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Author Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E.
Title (up) Relaxation of the resistive superconducting state in boron-doped diamond films Type Journal Article
Year 2016 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 93 Issue 6 Pages 064506
Keywords boron-doped diamond films, resistive superconducting state, relaxation time
Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1167
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