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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Character of submillimeter photoconductivity in n-lnSb |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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1 |
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121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Tang, Liang; Kocabas, Sukru Ekin; Latif, Salman; Okyay, Ali K.; Ly-Gagnon, Dany-Sebastien; Saraswat, Krishna C.; Miller, David A. B. |
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Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna |
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2008 |
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Nature Photonics |
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2 |
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226-229 |
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optical antennas |
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A critical challenge for the convergence of optics and electronics is that the micrometre scale of optics is significantly larger than the nanometre scale of modern electronic devices. In the conversion from photons to electrons by photodetectors, this size incompatibility often leads to substantial penalties in power dissipation, area, latency and noise. A photodetector can be made smaller by using a subwavelength active region; however, this can result in very low responsivity because of the diffraction limit of the light. Here we exploit the idea of a half-wave Hertz dipole antenna (length approx 380 nm) from radio waves, but at near-infrared wavelengths (length approx 1.3 microm), to concentrate radiation into a nanometre-scale germanium photodetector. This gives a polarization contrast of a factor of 20 in the resulting photocurrent in the subwavelength germanium element, which has an active volume of 0.00072 microm3, a size that is two orders of magnitude smaller than previously demonstrated detectors at such wavelengths. |
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858 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Cherednichenko, S.; Kroug, M.; Merkel, H.; Khosropanah, P.; Adam, A.; Kollberg, E.; Loudkov, D.; Gol'tsman, G.; Voronov, B.; Richter, H.; Huebers, H.-W. |
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1.6 THz heterodyne receiver for the far infrared space telescope |
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2002 |
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Phys. C: Supercond. |
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Phys. C: Supercond. |
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372-376 |
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427-431 |
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NbN HEB mixers, applications |
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A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz. |
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0921-4534 |
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1527 |
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Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. |
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Title |
A microwave-operated hot-electron-bolometric power detector for terahertz radiation |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300604 (1 to 4) |
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NbN HEB mixer |
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A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW. |
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1558-2515 |
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1354 |
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