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ГОСТ 2.125-2008 ЕСКД Правила выполнения эскизных конструкторских документов |
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2008 |
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RPLAB @ kostochkin @ |
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934 |
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ГОСТ Р 15.011-96. Патентные исследования. Содержание и порядок проведения |
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Book Whole |
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1996 |
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gost, patents, detproj |
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no |
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865 |
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Alda, Javier; Rico-García, José M.; López-Alonso, José M.; Boreman, G. |
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Optical antennas for nano-photonic applications |
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Journal Article |
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2005 |
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Nanotechnology |
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Nanotech. |
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16 |
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5 |
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S230-S234 |
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optical antennas |
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Antenna-coupled optical detectors, also named optical antennas, are being developed and proposed as alternative detection devices for the millimetre, infrared, and visible spectra. Optical and infrared antennas represent a class of optical components that couple electromagnetic radiation in the visible and infrared wavelengths in the same way as radioelectric antennas do at the corresponding wavelengths. The size of optical antennas is in the range of the detected wavelength and they involve fabrication techniques with nanoscale spatial resolution. Optical antennas have already proved and potential advantages in the detection of light showing polarization dependence, tuneability, and rapid time response. They also can be considered as point detectors and directionally sensitive elements. So far, these detectors have been thoroughly tested in the mid-infrared with some positive results in the visible. The measurement and characterization of optical antennas requires the use of an experimental set-up with nanometric resolution. On the other hand, a computation simulation of the interaction between the material structures and the incoming electromagnetic radiation is needed to explore alternative designs of practical devices. |
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RPLAB @ gujma @ |
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734 |
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An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
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Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
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Journal Article |
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2005 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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86 |
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172106 - 172106-3 |
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2DEG |
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RPLAB @ akorneev @ |
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603 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
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Superconductivity in highly disordered NbN nanowires |
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Journal Article |
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2016 |
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Nanotechnol. |
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Nanotechnol. |
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27 |
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47 |
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47lt02 (1 to 8) |
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NbN nanowires |
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The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
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National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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English |
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0957-4484 |
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PMID:27782000 |
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1332 |
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