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Hong, Kyushik; Marsh, P. F.; Geok-Ing Ng; Pavlidis, D.; Hong, Chang-Hee |
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Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications |
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1994 |
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IEEE Trans. Electron Devices |
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41 |
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9 |
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1489-1497 |
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253 |
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Semenov, Alexei; Richter, Heiko; Smirnov, Konstantin; Voronov, Boris; Gol'tsman, Gregory; Hübers, Heinz-Wilhelm |
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Title |
The development of terahertz superconducting hot-electron bolometric mixers |
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2004 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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17 |
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5 |
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436-439 |
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NbN HEB mixers |
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We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model. |
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357 |
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Hesler, J. L.; Hall, W. R.; Crowe, T. W.; Weikle, R. M.; Bradley, R. F.; Pan, Shing-Kuo |
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Submm wavelenght waveguide mixers using planar Schottky barier diods |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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462 |
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270 |
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Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
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Phonon-cooled NbN HEB mixers for submillimeter wavelengths |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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23-28 |
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waveguide NbN HEB mixers |
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The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz. |
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275 |
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Kerr, A. R.; Feldman, M. J.; Pan, S.-K. |
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Receiver noise temperature, the quantum noise limit, and zero–point fluctuations |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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101-111 |
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