| Records |
| Author |
Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
| Title |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
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Journal Article |
| Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal  |
Appl. Phys. Lett. |
| Volume |
103 |
Issue |
25 |
Pages |
252602 (1 to 4) |
| Keywords |
disordered TiN films, electron-phonon relaxation time |
| Abstract |
We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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RPLAB @ kovalyuk @ |
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941 |
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Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
| Title |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
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Conference Article |
| Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
220 |
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02009 |
| Keywords |
grating coupler, SiO2 |
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The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform. |
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2100-014X |
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1188 |
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Korneev, A.; Kovalyuk, V.; An, P.; Golikov, A.; Zubkova, E.; Ferrari, S.; Kahl, O.; Pernice, W.; Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Superconducting single-photon detector for integrated waveguide spectrometer |
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Conference Article |
| Year |
2018 |
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EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
190 |
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04009 |
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SSPD, SNSPD, Si3N4 waveguides, waveguide spectrometer |
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We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector. |
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1199 |
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Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. |
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Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films |
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Journal Article |
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2015 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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1-4 |
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TiN MKID |
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We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor. |
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1051-8223 |
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1296 |
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Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
| Title |
Investigating the detection regimes of a superconducting single-photon detector |
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Journal Article |
| Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
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80 |
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7 |
Pages |
435 |
| Keywords |
SSPD, quantum efficiency |
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The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
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1070-9762 |
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1172 |
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