| Records |
| Author |
Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
| Title |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
Type |
Conference Article |
| Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
220 |
Issue |
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Pages |
02009 |
| Keywords |
grating coupler, SiO2 |
Abstract  |
The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform. |
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2100-014X |
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no |
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1188 |
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| Author |
Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
| Title |
Investigating the detection regimes of a superconducting single-photon detector |
Type |
Journal Article |
| Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
| Volume |
80 |
Issue |
7 |
Pages |
435 |
| Keywords |
SSPD, quantum efficiency |
| Abstract |
The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
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1070-9762 |
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no |
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1172 |
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Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. |
| Title |
Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures |
Type |
Abstract |
| Year |
2019 |
Publication |
Proc. Amorphous and Nanostructured Chalcogenides |
Abbreviated Journal |
Proc. Amorphous and Nanostructured Chalcogenides |
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Pages |
47-48 |
| Keywords |
optical waveguides |
| Abstract |
The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. |
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Technical University of Moldova |
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Poster |
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1281 |
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Griffin, M. J.; Abergel, A.; Abreu, A.; Ade, P. A. R.; André, P.; Augueres, J.-L.; Babbedge, T.; Bae, Y.; Baillie, T.; Baluteau, J.-P.; Barlow, M. J.; Bendo, G.; Benielli, D.; Bock, J. J.; Bonhomme, P.; Brisbin, D.; Brockley-Blatt, C.; Caldwell, M.; Cara, C.; Castro-Rodriguez, N.; Cerulli, R.; Chanial, P.; Chen, S.; Clark, E.; Clements, D. L.; Clerc, L.; Coker, J.; Communal, D.; Conversi, L.; Cox, P.; Crumb, D.; Cunningham, C.; Daly, F.; Davis, G. R.; de Antoni, P.; Delderfield, J.; Devin, N.; di Giorgio, A.; Didschuns, I.; Dohlen, K.; Donati, M.; Dowell, A.; Dowell, C. D.; Duband, L.; Dumaye, L.; Emery, R. J.; Ferlet, M.; Ferrand, D.; Fontignie, J.; Fox, M.; Franceschini, A.; Frerking, M.; Fulton, T.; Garcia, J.; Gastaud, R.; Gear, W. K.; Glenn, J.; Goizel, A.; Griffin, D. K.; Grundy, T.; Guest, S.; Guillemet, L.; Hargrave, P. C.; Harwit, M.; Hastings, P.; Hatziminaoglou, E.; Herman, M.; Hinde, B.; Hristov, V.; Huang, M.; Imhof, P.; Isaak, K. J.; Israelsson, U.; Ivison, R. J.; Jennings, D.; Kiernan, B.; King, K. J.; Lange, A. E.; Latter, W.; Laurent, G.; Laurent, P.; Leeks, S. J.; Lellouch, E.; Levenson, L.; Li, B.; Li, J.; Lilienthal, J.; Lim, T.; Liu, S. J.; Lu, N.; Madden, S.; Mainetti, G.; Marliani, P.; McKay, D.; Mercier, K.; Molinari, S.; Morris, H.; Moseley, H.; Mulder, J.; Mur, M.; Naylor, D. A.; Nguyen, H.; O'Halloran, B.; Oliver, S.; Olofsson, G.; Olofsson, H.-G.; Orfei, R.; Page, M. J.; Pain, I.; Panuzzo, P.; Papageorgiou, A.; Parks, G.; Parr-Burman, P.; Pearce, A.; Pearson, C.; Pérez-Fournon, I.; Pinsard, F.; Pisano, G.; Podosek, J.; Pohlen, M.; Polehampton, E. T.; Pouliquen, D.; Rigopoulou, D.; Rizzo, D.; Roseboom, I. G.; Roussel, H.; Rowan-Robinson, M.; Rownd, B.; Saraceno, P.; Sauvage, M.; Savage, R.; Savini, G.; Sawyer, E.; Scharmberg, C.; Schmitt, D.; Schneider, N.; Schulz, B.; Schwartz, A.; Shafer, R.; Shupe, D. L.; Sibthorpe, B.; Sidher, S.; Smith, A.; Smith, A. J.; Smith, D.; Spencer, L.; Stobie, B.; Sudiwala, R.; Sukhatme, K.; Surace, C.; Stevens, J. A.; Swinyard, B. M.; Trichas, M.; Tourette, T.; Triou, H.; Tseng, S.; Tucker, C.; Turner, A.; Vaccari, M.; Valtchanov, I.; Vigroux, L.; Virique, E.; Voellmer, G.; Walker, H.; Ward, R.; Waskett, T.; Weilert, M.; Wesson, R.; White, G. J.; Whitehouse, N.; Wilson, C. D.; Winter, B.; Woodcraft, A. L.; Wright, G. S.; Xu, C. K.; Zavagno, A.; Zemcov, M.; Zhang, L.; Zonca, E. |
| Title |
The Herschel-SPIRE instrument and its in-flight performance |
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Journal Article |
| Year |
2010 |
Publication |
Astron. Astrophys. |
Abbreviated Journal |
A&A |
| Volume |
518 |
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Pages |
7 |
| Keywords |
SPIRE |
| Abstract |
The Spectral and Photometric Imaging REceiver (SPIRE), is the Herschel Space Observatory`s submillimetre camera and spectrometer. It contains a three-band imaging photometer operating at 250, 350 and 500 μm, and an imaging Fourier-transform spectrometer (FTS) which covers simultaneously its whole operating range of 194-671 μm (447-1550 GHz). The SPIRE detectors are arrays of feedhorn-coupled bolometers cooled to 0.3 K. The photometer has a field of view of 4Â´× 8´, observed simultaneously in the three spectral bands. Its main operating mode is scan-mapping, whereby the field of view is scanned across the sky to achieve full spatial sampling and to cover large areas if desired. The spectrometer has an approximately circular field of view with a diameter of 2.6´. The spectral resolution can be adjusted between 1.2 and 25 GHz by changing the stroke length of the FTS scan mirror. Its main operating mode involves a fixed telescope pointing with multiple scans of the FTS mirror to acquire spectral data. For extended source measurements, multiple position offsets are implemented by means of an internal beam steering mirror to achieve the desired spatial sampling and by rastering of the telescope pointing to map areas larger than the field of view. The SPIRE instrument consists of a cold focal plane unit located inside the Herschel cryostat and warm electronics units, located on the spacecraft Service Module, for instrument control and data handling. Science data are transmitted to Earth with no on-board data compression, and processed by automatic pipelines to produce calibrated science products. The in-flight performance of the instrument matches or exceeds predictions based on pre-launch testing and modelling: the photometer sensitivity is comparable to or slightly better than estimated pre-launch, and the spectrometer sensitivity is also better by a factor of 1.5-2. |
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RPLAB @ gujma @ |
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695 |
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Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. |
| Title |
Quasi-1-dimensional superconductivity in highly disordered NbN nanowires |
Type |
Miscellaneous |
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2016 |
Publication |
arXiv |
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narrow NbN nanowires, BCS |
| Abstract |
The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties. |
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Duplicated as 1332 |
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1338 |
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