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Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vahtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G. |
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Title |
Direct detection effect in small volume hot electron bolometer mixers |
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2005 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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86 |
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16 |
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163503 (1 to 3) |
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HEB, mixer, direct detection effect |
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We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems. |
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377 |
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Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G. |
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NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz |
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2002 |
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Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE |
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LETI |
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St.-Petersburg |
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324 |
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Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. |
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NbN HEB mixers for frequencies of 2.5 and 3.8 THz |
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2004 |
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Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) |
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Moscow |
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RPLAB @ s @ qoheb_vnksf10_2004 |
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Kaurova, N. S.; Finkel, M. I.; Maslennikov, S. N.; Vahtomin, Yu. B.; Antipov, S. V.; Smirnov, K. V.; Voronov, B. M.; Gol'tsman, G. N.; Ilyin, K. S. |
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Submillimeter mixer based on YBa2Cu3O7-x thin film |
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2004 |
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Proc. 1-st conf. Fundamental problems of high temperature superconductivity |
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291 |
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HTS, HEB mixer |
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Moscow-Zvenigorod |
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Moscow-Zvenigorod |
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355 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
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Title |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
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2017 |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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147-148 |
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NbN HEB mixers, GaN buffer-layer, IF bandwidth |
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In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth. |
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