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Author (up) Elezov, M.; Scherbatenko, M.; Sych, D.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Towards the fiber-optic Kennedy quantum receiver Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue Pages 03011 (1 to 2)  
  Keywords SSPD, SNSPD, Kennedy quantum receiver  
  Abstract We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1288  
Permanent link to this record
 

 
Author (up) Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue Pages 03012  
  Keywords e-beam lithography, Si3N4  
  Abstract In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1189  
Permanent link to this record
 

 
Author (up) Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Integration of nanodiamonds with NV-centers on optical silicon nitride structures Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue Pages 03013  
  Keywords nanodiamonds, NV-centers, Si3N4  
  Abstract In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1190  
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Author (up) Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 220 Issue Pages 02009  
  Keywords grating coupler, SiO2  
  Abstract The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1188  
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