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Author Gao, G. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.
Title A novel terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer Type Conference Article
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 19-23
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Corporate Author Thesis
Publisher Place of Publication (up) Göteborg, Sweden Editor
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Area Expedition Conference
Notes Approved no
Call Number RPLAB @ s @ qc_lasers_gao_isstt16 Serial 367
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Author Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G.
Title NbN hot electron bolometer mixers with superior performance for space applications Type Conference Article
Year 2004 Publication Proc. Int. workshop on low temp. electronics Abbreviated Journal Proc. Int. workshop on low temp. electronics
Volume Issue Pages 11-17
Keywords NbN HEB mixers, applications
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Publisher Place of Publication (up) Noordwijk Editor Armandillo, E.; Leone, B.
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Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference International workshop on low temperature electronics- WOLTE 6 - Noordwijk
Notes Approved no
Call Number Serial 1496
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G.
Title Improved NbN phonon cooled hot electron bolometer mixers Type Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 413-423
Keywords NbN HEB mixers
Abstract NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.
Address
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Publisher Place of Publication (up) Tucson, USA Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 337
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