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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J.; de Korte, P.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. url  doi
openurl 
  Title Doubling of sensitivity and bandwidth in phonon-cooled hot-electron bolometer mixers Type Conference Article
  Year 2004 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 5498 Issue Pages 168-176  
  Keywords Hot electron bolometers, bandwidth, noise temperature, experimental  
  Abstract NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN – contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 – 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Zmuidzinas, J.; Holland, W.S.; Withington, S.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Millimeter and Submillimeter Detectors for Astronomy II  
  Notes Approved no  
  Call Number Serial 1744  
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. url  doi
openurl 
  Title Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz Type Journal Article
  Year 2004 Publication (up) Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 17 Issue 5 Pages S224-S228  
  Keywords NbN HEB mixers  
  Abstract NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 558  
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Author Yang, Z. Q.; Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Voronov, B.; Gol’tsman, G. N. url  doi
openurl 
  Title Reduced noise in NbN hot-electron bolometer mixers by annealing Type Journal Article
  Year 2006 Publication (up) Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 19 Issue 4 Pages L (9 to 12)  
  Keywords NbN HEB mixers  
  Abstract We find that the sensitivity of heterodyne receivers based on superconducting hot-electron bolometers (HEBs) increases by 25–30% after annealing at 85 °C in vacuum. The devices studied are twin-slot antenna coupled mixers with a small NbN bridge of 1 × 0.15 µm2. We show that annealing changes the device properties as reflected in sharper resistive transitions of the complete device, apparently reducing the device-related noise. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and a bath temperature of 4.3 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1456  
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