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Author Meledin, D.; Pantaleev, M.; Pavolotsky, A.; Risacher, C.; Belitsky, V.; Drakinskiy, V.; Cherednichenko, S. openurl 
  Title Balanced waveguide HEB mixer for APEX 1.3 THz receiver Type Conference Article
  Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
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  Publisher Place of Publication Göteborg, Sweden Editor  
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  Call Number RPLAB @ s @ wg_balanced Serial 362  
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Author Belitsky, V. Y.; Tarasov, M. A. openurl 
  Title SIS junction reactance complete compensation Type Journal Article
  Year 1991 Publication IEEE Trans. Magn. Abbreviated Journal  
  Volume 27 Issue 2 Pages 2638-2641  
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  Call Number Serial 243  
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Author Belitsky, V. Yu.; Kollberg, E. L. openurl 
  Title Tuning circuit for NbN SIS mixer Type Conference Article
  Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages 234  
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  Publisher Place of Publication Charlottesville, Virginia, USA Editor  
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  Call Number Serial 264  
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Author Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K. url  openurl
  Title Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies Type Conference Article
  Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 303-317  
  Keywords NbN HEB mixers  
  Abstract (up) In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).  
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  Call Number Serial 1614  
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Author Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. url  doi
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  Title Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers Type Journal Article
  Year 2017 Publication IEEE Trans. Terahertz Sci. Technol. Abbreviated Journal IEEE Trans. Terahertz Sci. Technol.  
  Volume 7 Issue 1 Pages 53-59  
  Keywords NbN HEB mixer  
  Abstract (up) In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.  
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  ISSN 2156-3446 ISBN Medium  
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  Call Number Serial 1330  
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