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| Author | Lobanov, Y.; Tong, E.; Blundell, R.; Hedden, A.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz | Type | Journal Article | ||
| Year | 2011 | Publication  |
IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
| Volume | 21 | Issue | 3 | Pages | 628-631 |
| Keywords | waveguide NbN HEB mixers | ||||
| Abstract | We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 719 | ||
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| Author | Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N. | ||||
| Title | Direct measurement of the gain and noise bandwidths of HEB mixers | Type | Journal Article | ||
| Year | 2011 | Publication |
IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 21 | Issue | 3 | Pages | 645-648 |
| Keywords | waveguide NbN HEB mixers | ||||
| Abstract | The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 720 | ||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. | ||||
| Title | Probing the stability of HEB mixers with microwave injection | Type | Journal Article | ||
| Year | 2015 | Publication |
IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 25 | Issue | 3 | Pages | 2300404 (1 to 4) |
| Keywords | NbN HEB mixer, stability, Allan-variance | ||||
| Abstract | Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1355 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication |
IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
| Year | 2017 | Publication |
IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 1-5 |
| Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1324 | |||
| Permanent link to this record | |||||