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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A. D.; Gol’tsman, G. N. |
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2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
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2007 |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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112 |
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NbN HEB mixers |
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A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. Measurements of the mixers sensitivity and the input RF band are presented, and compared against calculations. |
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1419 |
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Cherednichenko, S.; Drakinskiy, V.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A.D.; Gol’tsman, G.N. |
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Terahertz heterodyne array based on NbN HEB mixers |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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43 |
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NbN HEB mixers array |
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A 16 pixel heterodyne receiver for 2.5 THz is been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Miniature mirrors (one per pixel) and back short for the antenna were used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4 / SiO 2 membranes was found to be about 3 GHz, when an MgO buffer layers is applied on the membrane. We will also present the progress in the camera heterodyne tests. |
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1411 |
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Khosropanah, P.; Merkel, H.; Yngvesson, S.; Adam, A.; Cherednichenko, S.; Kollberg, E. |
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A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth |
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2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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474-488 |
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HEB mixer numerical model, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model |
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A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted. |
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University of Michigan, Ann Arbor, MI USA |
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893 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
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Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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1997 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3548-3551 |
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A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1051-8223 |
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1595 |
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Cherednichenko, S.; Kroug, M.; Merkel, H.; Khosropanah, P.; Adam, A.; Kollberg, E.; Loudkov, D.; Gol'tsman, G.; Voronov, B.; Richter, H.; Huebers, H.-W. |
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1.6 THz heterodyne receiver for the far infrared space telescope |
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2002 |
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Phys. C: Supercond. |
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Phys. C: Supercond. |
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372-376 |
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427-431 |
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NbN HEB mixers, applications |
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A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz. |
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0921-4534 |
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1527 |
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