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Author Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M. url  openurl
  Title NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version Type Conference Article
  Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 258-271  
  Keywords NbN HEB mixers  
  Abstract We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups.  
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  Notes Approved no  
  Call Number Serial 1605  
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Author Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K. url  openurl
  Title Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies Type Conference Article
  Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 303-317  
  Keywords NbN HEB mixers  
  Abstract In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1614  
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