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Cherednichenko, S.; Kroug, M.; Yagoubov, P.; Merkel, H.; Kollberg, E.; Yngvesson, K. S.; Voronov, B.; Gol’tsman, G. |
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Title |
IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates |
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2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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219-227 |
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NbN HEB mixers, cinversion gain bandwidth, IF bandwidth |
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An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz. |
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1557 |
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Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Local oscillator power requirement and saturation effects in NbN HEB mixers |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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273-285 |
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NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range |
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The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics. |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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318 |
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Kroug, M.; Cherednichenko, S.; Choumas, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Richter, H.; Loudkov, D.; Voronov, B.; Gol'Tsman, G. |
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Title |
HEB quasi-optical heterodyne receiver for THz frequencies |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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244-252 |
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HEB mixer, NbN, MgO, conversion gain bandwidth, noise temperature |
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San Diego, CA, USA |
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319 |
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Merkel, H. F.; Khosropanah, P.; Sigfrid Yngvesson, K.; Cherednichenko, S.; Kroug, M.; Adam, A.; Kollberg, E. |
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Title |
An active zone small signal model for hot-electron bolometric mixers |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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55 |
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San Diego, CA, USA |
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RPLAB @ s @ losses_in_contacts_merkel |
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320 |
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Cherednichenko, S.; Kroug, M.; Khosropanah, P.; Adam, A.; Merkel, H.; Kolberg, E.; Loudkov, D.; Voronov, B.; Gol'tsman, G.; Richter, H.; Hübers, H. W. |
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A broadband terahertz heterodyne receiver with an NbN HEB mixer |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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85-95 |
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NbN HEB mixers |
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We present a broadband and low noise heterodyne receiver for 1.4-1.7 THz designed for the Hershel Space Observatory. A phonon- cooled NbN HEB mixer was integrated with a normal metal double- slot antenna and an elliptical silicon lens. DSB receiver noise temperature Tr was measured from 1 GHz through 8GHz intermediate frequency band with 50 MHz instantaneous bandwidth. At 4.2 K bath temperature and at 1.6 THz LO frequency Tr is 800 K with the receiver noise bandwidth of 5 GHz. While at 2 K bath temperature Tr was as low as 700 K. At 0.6 THz and 1.1 THz a spiral antenna integrated NbN HEB mixer showed the receiver noise temperature 500 K and 800 K, though no antireflection coating was used in this case. Tr of 1100 K was achieved at 2.5 THz while the receiver noise bandwidth was 4 GHz. |
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Cambridge, MA, USA |
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Harward University |
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332 |
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