toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Verevkin, A.; Slysz, W.; Pearlman, A.; Zhang, J.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Currie, M. url  openurl
  Title Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors Type Conference Article
  Year 2003 Publication CLEO/QELS Abbreviated Journal CLEO/QELS  
  Volume Issue Pages CThM8  
  Keywords NbN SSPD; SNSPD; Infrared; Quantum detectors; Detectors; Photon counting; Quantum communications; Quantum cryptography; Single photon detectors; Superconductors  
  Abstract (down) We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps.  
  Address  
  Corporate Author Thesis  
  Publisher Optical Society of America Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference  
  Notes Approved no  
  Call Number Serial 1517  
Permanent link to this record
 

 
Author Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. url  openurl
  Title Electron-phonon relaxation time in ultrathin tungsten silicon film Type Miscellaneous
  Year 2018 Publication arXiv Abbreviated Journal  
  Volume Issue Pages  
  Keywords WSi film  
  Abstract (down) Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Duplicated as 1341 Approved no  
  Call Number Serial 1340  
Permanent link to this record
 

 
Author Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. openurl 
  Title Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films Type Journal Article
  Year 1995 Publication JETP Abbreviated Journal JETP  
  Volume 80 Issue 5 Pages 960-964  
  Keywords  
  Abstract (down) The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 989  
Permanent link to this record
 

 
Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. url  doi
openurl 
  Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
  Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 56 Issue 16 Pages 10089-10096  
  Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity  
  Abstract (down) The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1766  
Permanent link to this record
 

 
Author Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. url  doi
openurl 
  Title Ultrafast superconducting single-photon detector Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 15 Pages 1670-1680  
  Keywords SSPD, SNSPD  
  Abstract (down) The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0950-0340 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 607  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: