| Records |
| Author |
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
| Title |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
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Journal Article |
| Year |
1996 |
Publication  |
J. of Communications Technology and Electronics |
Abbreviated Journal |
J. of Communications Technology and Electronics |
| Volume |
41 |
Issue |
5 |
Pages |
408-414 |
| Keywords |
submillimeter waves, transmission |
| Abstract |
A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
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1064-2269 |
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Радиотехника и электроника 41, no. 4 (1996): 441-447 |
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1611 |
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Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol'tsman, G. |
| Title |
New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving |
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Conference Article |
| Year |
2008 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
97 |
Issue |
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Pages |
012307 (1 to 6) |
| Keywords |
PNR SSPD; SNSPD |
| Abstract |
We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing. |
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1742-6596 |
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1245 |
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Milostnaya, I.; Korneev, A.; Rubtsova, I.; Seleznev, V.; Minaeva, O.; Chulkova, G.; Okunev, O.; Voronov, B.; Smirnov, K.; Gol'tsman, G.; Slysz, W.; Wegrzecki, M.; Guziewicz, M.; Bar, J.; Gorska, M.; Pearlman, A.; Kitaygorsky, J.; Cross, A.; Sobolewski, R. |
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Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength |
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Conference Article |
| Year |
2006 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
43 |
Issue |
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Pages |
1334-1337 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ~30-40%, which is limited by the NbN film absorption. For the infrared range (1.55µm), QE is ~6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ~20% for 1.55-µm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 µm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 µm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-µm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ~1% system QE for 1.55 µm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications. |
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1742-6588 |
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no |
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1450 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
| Title |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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Journal Article |
| Year |
1995 |
Publication |
JETP |
Abbreviated Journal |
JETP |
| Volume |
80 |
Issue |
5 |
Pages |
960-964 |
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| Abstract |
The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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RPLAB @ phisix @ |
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989 |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
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Journal Article |
| Year |
1995 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
61 |
Issue |
7 |
Pages |
591-595 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
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The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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1624 |
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