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Author (up) Bueno, J.; Coumou, P. C. J. J.; Zheng, G.; de Visser, P. J.; Klapwijk, T. M.; Driessen, E. F. C.; Doyle, S.; Baselmans, J. J. A openurl 
  Title Anomalous response of superconducting titanium nitride resonators to terahertz radiation Type Journal Article
  Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal  
  Volume 105 Issue Pages 192601 (1 to 5)  
  Keywords KID, TiN, NEP, disordered superconductors, inhomogeneous state  
  Abstract We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations.  
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  Call Number Serial 1068  
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Author (up) Coumou, P. C. J. J.; Driessen, E. F. C.; Bueno, J.; Chapelier, C.; Klapwijk, T. M. url  doi
openurl 
  Title Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films Type Journal Article
  Year 2013 Publication Phys. Rev. B Abbreviated Journal  
  Volume 88 Issue 18 Pages 180505 (1 to 5)  
  Keywords strongly disordered superconducting TiN films, microwave resonators  
  Abstract We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties.  
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  Notes Approved no  
  Call Number Serial 1069  
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Author (up) Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. url  doi
openurl 
  Title Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 1-4  
  Keywords TiN MKID  
  Abstract We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.  
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  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1296  
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