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Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. |
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Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter |
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2010 |
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35th Int. Conf. Infrared, Millimeter, and Terahertz Waves |
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1-1 |
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SSPD, SNSPD, HEB |
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We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications. |
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2162-2027 |
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RPLAB @ sasha @ goltsman2010superconducting |
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1028 |
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Glejm, A. V.; Anisimov, A. A.; Asnis, L. N.; Vakhtomin, Yu. B.; Divochiy, A. V.; Egorov, V. I.; Kovalyuk, V. V.; Korneev, A. A.; Kynev, S. M.; Nazarov, Yu. V.; Ozhegov, R. V.; Rupasov, A. V.; Smirnov, K. V.; Smirnov, M. A.; Goltsman, G. N.; Kozlov, S. A. |
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Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s |
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2014 |
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Bulletin of the Russian Academy of Sciences. Physics |
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78 |
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3 |
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171-175 |
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SSPD, SNSPD, applications |
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An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described. |
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1062-8738 |
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RPLAB @ kovalyuk @ |
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940 |
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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
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Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
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2010 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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97 |
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13 |
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131907 (1 to 3) |
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SSPD, SNSPD, InAsP/InP quantum dots |
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By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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0003-6951 |
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1238 |
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