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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Effect of a high magnetic field on the spectrum of donors in InSb |
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Year |
1977 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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Volume |
11 |
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12 |
Pages |
2373-2375 |
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Keywords |
InSb, energy spectrum, donors, high magnetic field |
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Russian |
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Воздействие сильного магнитного поля на спектр доноров в InSb |
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1729 |
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Elant'ev, A. I.; Karasik, B. S. |
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Title |
Effect of high-frequency current on Nb superconductive film in resistive state |
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Year |
1989 |
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Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
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15 |
Issue |
7 |
Pages |
379-383 |
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Keywords |
Nb HEB |
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882 |
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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
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Journal Article |
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1983 |
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Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
17 |
Issue |
8 |
Pages |
908-913 |
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BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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1714 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. |
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Title |
S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation |
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1992 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
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12 |
Pages |
2386-2402 |
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YBCO HTS switches |
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Abstract |
A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed. |
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0131-5366 |
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1674 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
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Year |
1977 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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Volume |
45 |
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3 |
Pages |
555-565 |
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Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum |
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Abstract |
The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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