| Records |
| Author |
Tretyakov, I. V.; Ryabchun, S. A.; Maslennikov, S. N.; Finkel, M. I.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G.N. |
| Title |
NbN HEB mixer: fabrication, noise temperature reduction and characterization |
Type |
Conference Article |
| Year |
2008 |
Publication |
Proc. Basic problems of superconductivity |
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| Keywords |
HEB, mixer, noise temperature, conversion gain bandwidth |
| Abstract |
We demonstrate that in the terahertz region superconducting hot-electron mixers offer the lowest noise temperature, opening the possibility of using HTS's in the future to fabricate these devices. Specifically, a noise temperature of 950 K was measured for the receiver operating at 2.5 THz with a NbN HEB mixer, and a gain bandwidth of 6 GHz was measured at 300 GHz near Tc for the same mixer. |
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Moscow-Zvenigorod |
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591 |
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| Author |
Finkel, M.; Thierschmann, H. R.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
| Title |
Branchline and directional THz coupler based on PECVD SiNx-technology |
Type |
Conference Article |
| Year |
2016 |
Publication |
41st IRMMW-THz |
Abbreviated Journal |
41st IRMMW-THz |
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| Keywords |
microstrip, fixtures, coplanar waveguides, couplers, standards, probes, dielectrics |
| Abstract |
A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope. |
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2162-2035 |
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978-1-4673-8485-8 |
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| Call Number |
7758586 |
Serial |
1295 |
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