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Author Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. openurl 
  Title Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications Type Journal Article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 97 Issue 15 Pages 3  
  Keywords SSPD  
  Abstract We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.  
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  Call Number (up) RPLAB @ gujma @ Serial 681  
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Author Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. url  doi
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  Title Superconducting parallel nanowire detector with photon number resolving functionality Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 2-3 Pages 334-344  
  Keywords PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN  
  Abstract We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.  
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  ISSN 0950-0340 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number (up) RPLAB @ gujma @ Serial 701  
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