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Author  |
Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
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Title |
Resistive transition of niobium superconducting hot-electron bolometer mixers |
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Journal Article |
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Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
73 |
Issue |
19 |
Pages |
2826 |
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Keywords |
HEB |
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0003-6951 |
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543 |
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Author |
Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
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Title |
Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
Type |
Journal Article |
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Year |
2001 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
79 |
Issue |
15 |
Pages |
2483-2485 |
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0003-6951 |
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Serial |
311 |
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Author |
Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
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Title |
NbN hot electron bolometer mixers with superior performance for space applications |
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Conference Article |
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Year |
2004 |
Publication |
Proc. Int. workshop on low temp. electronics |
Abbreviated Journal |
Proc. Int. workshop on low temp. electronics |
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Pages |
11-17 |
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Keywords |
NbN HEB mixers, applications |
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Noordwijk |
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Armandillo, E.; Leone, B. |
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International workshop on low temperature electronics- WOLTE 6 - Noordwijk |
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no |
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Serial |
1496 |
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Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N. |
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Title |
Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications |
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Conference Article |
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Year |
2005 |
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Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
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Volume |
9 |
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Pages |
148-153 |
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Keywords |
NbN HEB mixers |
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International Institute of Informatics and Systemics |
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9806560639, 9789806560635 |
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Conference |
9th World Multi-Conference on Systemics, Cybernetics and Informatics |
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no |
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Call Number |
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Serial |
1480 |
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Author |
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
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Title |
Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
Type |
Journal Article |
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Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
91 |
Issue |
6 |
Pages |
062504 (1 to 3) |
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Keywords |
NbN films, nanofilms |
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Abstract |
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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0003-6951 |
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1425 |
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