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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I.
Title Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors Type (up) Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1231-1234
Keywords spectrum, semiconductors, admixtures, strong magnetic-field
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Address
Corporate Author Thesis
Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number blagosklonskaya1978effect Serial 1724
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Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
Title Investigation of population and ionization of donor excited states in Ge Type (up) Conference Article
Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors
Volume Issue Pages 631-634
Keywords Ge, donor excited states
Abstract
Address Amsterdam
Corporate Author Thesis
Publisher North-Holland Publishing Co. Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1732
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Author Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V.
Title Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films Type (up) Conference Article
Year 1996 Publication Czech J. Phys. Abbreviated Journal Czech J. Phys.
Volume 46 Issue S5 Pages 2489-2490
Keywords Al, Be, Nb films
Abstract The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
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Language Summary Language Original Title
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ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1767
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E.
Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type (up) Journal Article
Year 1988 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.
Volume 14 Issue 7 Pages 414-420
Keywords HEB
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Notes Duplicated as 1697 Approved no
Call Number Serial 236
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Author Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Limiting characteristic of fast superconducting bolometers Type (up) Journal Article
Year 1989 Publication Sov. Phys.-Tech. Phys. Abbreviated Journal Sov. Phys.-Tech. Phys.
Volume 34 Issue Pages 195-199
Keywords HEB
Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
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Publisher Place of Publication Editor
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Notes О предельных характеристиках быстродействующих серхпроводниковых болометров Approved no
Call Number Serial 237
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